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参数资料
| 型号： | AP1A4A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43B, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 104K |
| 代理商： | AP1A4A |
Data Sheet D16171EJ1V0DS
3
AP1 SERIES
AP1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
22 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
200
470
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
100
300
DC current gain
hFE3 **
VCE =
2.0 V, IC = 0.7 A
50
200
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.2 A
0.2
0.4
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.65
0.3
V
Input resistance
R1
2.3
3.3
4.3
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
AP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
22 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
300
600
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
300
700
DC current gain
hFE3 **
VCE =
2.0 V, IC = 0.7 A
135
600
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.15 A
0.14
0.3
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
2.31
3.3
4.29
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
AP1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
22 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
2.0 V, IC = 0.1 A
200
DC current gain
hFE2 **
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE3 **
VCE =
2.0 V, IC = 0.7 A
50
Low level output voltage
VOL **
VIN =
5.0 V, IC = 0.15 A
0.45
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
3.29
4.7
6.11
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
相关PDF资料 |
PDF描述 |
|---|---|
| AP1F3P-AZ | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AP1A3M | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AP1A4M-AZ | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AP1A4M | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AP1A3M-AZ | 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP1A4M | 制造商:NEC 制造商全称:NEC 功能描述:on-chip resistor NPN silicon epitaxial transistor |
| AP1ANC | 制造商:OMRON AUTOMATION AND SAFETY 功能描述:TERMINAL ENCLOSE SIDEMNT METAL |
| AP1B | 制造商:OMRON INDUSTRIAL AUTOMATION 功能描述:SWITCH |
| AP1-B | 功能描述:基本/快动开关 SWITCH RoHS:否 制造商:Omron Electronics 触点形式:SPDT 执行器:Lever 电流额定值:5 A 电压额定值 AC:250 V 电压额定值 DC:30 V 功率额定值: 工作力:120 g IP 等级:IP 67 NEMA 额定值: 端接类型:Wire 安装:Panel |
| AP1C2H | 制造商:FUJISOKU 功能描述:New |
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