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参数资料
| 型号： | AP1R803GMT-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 170 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
| 文件页数： | 3/4页 |
| 文件大小： | 93K |
| 代理商： | AP1R803GMT-HF |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP1R803GMT-HF
0
40
80
120
160
0.0
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
100
200
300
0.0
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
6.0V
5.0V
V G = 4.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =30A
V G =10V
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
1.2
1.6
2
2.4
2.8
3.2
3.6
4
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =20A
T C =25
o C
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
相关PDF资料 |
PDF描述 |
|---|---|
| AP1RA03GMT-HF | 185 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP20N15GH-HF | 20 A, 150 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP2301GN-HF | 2.6 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET |
| AP2302AGN-HF | 4.6 A, 20 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP2304GN-HF | 2.7 A, 25 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP1-R-87055-011 | 制造商:Sensata Technologies 功能描述:AP1-R-87055-011 /Pole # 1 /Prod Family: 0202 |
| AP1-R-87055-026 | 制造商:Sensata Technologies 功能描述:AP1-R-87055-026 /Pole # 1 /Prod Family: 0202 |
| AP1-R-87055-033 | 制造商:Sensata Technologies 功能描述:AP1-R-87055-033 /Pole # 1 /Prod Family: 0202 |
| AP1RA03GMT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, SO-8 Compatible with Heatsink |
| AP1RA03GMT-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 1.59MOHM PMPAK5X6 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 1.59MOHM, PMPAK5X6 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 1.59MOHM, PMPAK5X6, Transistor Polarity:N Channel, Continuous Drain Current Id:185A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.00159ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:83.3W, , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 1.59MOHM, PMPAK5X6, Transistor Polarity:N Channel, Continuous |
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