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参数资料
| 型号： | AP20GT60SW |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 60K |
| 代理商： | AP20GT60SW |
Advanced Power
N-CHANNEL INSULATED GATE
Electronics Corp.
BIPOLAR TRANSISTOR
Features
VCES
▼ High Speed Switching
IC
▼ Low Saturation Voltage
VCE(sat),Typ.=1.8V@IC=20A
▼ Built-in Fast Recovery Diode
Absolute Maximum Ratings
, 1/8" from case for 5 seconds .
Notes:
1. Pulse width limited by max. junction temperature .
Thermal Data
Symbol
Rthj-c
Rthj-c(Diode)
Rthj-a
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Min.
Typ.
Max.
Units
VCES
600
-
V
IGES
--
+100
nA
ICES
-
100
uA
VCE(sat)
-
1.8
2.3
V
VGE(th)
2-
6
V
Qg
-
110
175
nC
Qge
-28
-
nC
Qgc
-40
-
nC
td(on)
-35
-
ns
tr
-20
-
ns
td(off)
-
135
-
ns
tf
-
130
260
ns
Eon
-
0.25
-
mJ
Eoff
-1
-
mJ
Cies
-
3840
6150
pF
Coes
-80
-
pF
Cres
-55
-
pF
VF
-
1.65
2
V
trr
-50
-
ns
Qrr
-80
-
nC
Data and specifications subject to change without notice
IC@TC=100℃
Collector Current
20
A
FRD Forward Voltage
IF=20A
Turn-On Switching Loss
Turn-Off Switching Loss
VCE=480V,
Ic=20A,
VGE=15V,
RG=5Ω,
Inductive Load
VGE=0V
Reverse Transfer Capacitance
Rise Time
Fall Time
Turn-off Delay Time
FRD Reverse Recovery Time
IF=10A
FRD Reverse Recovery Charge
di/dt = 100 A/μs
Input Capacitance
VCE=25V
AP20GT60SW
Symbol
VCES
600V
20A
Rating
Collector-Emitter Voltage
Units
V
600
Parameter
A
V
160
A
+20
40
VGE
IC@TC=25℃
Collector Current
Gate-Emitter Voltage
1
Storage Temperature Range
Parameter
Test Conditions
1.5
oC/W
oC
oC/W
ICM
125
Maximum Lead Temp. for Soldering Purposes
PD@TC=25℃
TJ
TSTG
Operating Junction Temperature Range
TL
-55 to 150
Turn-on Delay Time
Total Gate Charge
Parameter
Gate-to-Emitter Leakage Current
Collect-to-Emitter Breakdown Voltage
Gate-Emitter Charge
Collector-Emitter Saturation Voltage
Collector-Emitter Leakage Current
Gate Threshold Voltage
Gate-Collector Charge
IC=20A
Thermal Resistance Junction-Case
VCE=600V, VGE=0V
VGE=15V
Thermal Resistance Junction-Ambient
VCE=VGE, IC=250uA
VGE=15V, IC=20A
VGE=+20V, VCE=0V
Thermal Resistance Junction-Case
VGE=0V, IC=250uA
A
Maximum Power Dissipation
300
Units
W
150
Value
IDM
Collector to Emitter Diode Forward Current
1
40
RoHS-compliant Product
201010051
oC
VCE=480V
Pulsed Collector Current
1
1
Output Capacitance
f=1.0MHz
oC
40
G
C
E
TO-3P
C
G
C
E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP20GT60W | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP20N03GP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP20N03GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP20N03H | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP20N03J | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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