参数资料
型号: AP20N15GH-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 20 A, 150 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 94K
代理商: AP20N15GH-HF
AP20N15GH-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Typical Power Dissipation
Fig 12. Gate Charge Waveform
4
0
2
4
6
8
10
12
0
1020
3040
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS = 120 V
I D =14 A
Q
VG
10V
QGS
QGD
QG
Charge
0
400
800
1200
1600
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
Operation in this
area limited by
RDS(ON)
0
20
40
60
80
100
0
50
100
150
T C , Case Temperature (
o C )
P
D
(W
)
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