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参数资料
| 型号： | AP2112R5A-2.6TRG1 |
| 厂商： | BCD SEMICONDUCTOR MANUFACTURING LTD |
| 元件分类： | 固定正电压单路输出LDO稳压器 |
| 英文描述： | 2.6 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO5 |
| 封装： | GREEN, SOT-89, 5 PIN |
| 文件页数： | 16/19页 |
| 文件大小： | 596K |
| 代理商： | AP2112R5A-2.6TRG1 |
Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2112
Aug. 2010 Rev 1. 0
BCD Semiconductor Manufacturing Limited
6
Electrical Characteristics
AP2112-1.2 Electrical Characteristic (Note 2)
VIN=2.5V, CIN=1.0F (Ceramic), COUT=1.0F (Ceramic), Typical TA= 25°C, Bold typeface applies over -40°C≤TJ≤85°C
ranges, unless otherwise specified (Note 3).
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Voltage
VOUT
VIN =2.5V, 1mA ≤ IOUT ≤ 30mA
VOUT
*98.5%
1.2
VOUT
*101.5%
V
Maximum Output
Current
IOUT(MAX)
VIN =2.5V,
VOUT=1.182V to 1.218V
600
mA
Load Regulation
(V
△ OUT/VOUT)/
△
IOUT
VIN=2.5V, 1mA ≤ IOUT ≤600mA
0.2
±
0.1
%/A
Line Regulation
(V
△ OUT/VOUT)/
△
VIN
2.5V≤VIN≤6V, IOUT=30mA
0.02
%/V
IOUT =10mA
1000
1300
IOUT =300mA
1000
1300
Dropout Voltage
VDROP
IOUT=600mA
1000
1300
mV
Quiescent Current
IQ
VIN=2.5V, IOUT=0mA
55
80
A
Standby Current
ISTD
VIN=2.5V, VEN in OFF mode
0.01
1.0
A
f=100Hz
65
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p
VIN=2.5V,
IOUT=100mA
f=1KHz
65
dB
Output Voltage
Temperature
Coefficient
( VOUT/VOUT)/
△
T
△
IOUT=30mA
TA =-40°C to 85°C
±100
ppm
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
No Load, 10Hz ≤ f ≤100kHz
50
VRMS
VEN High Voltage
VIH
Enable logic high, regulator on
1.5
6.0
VEN Low Voltage
VIL
Enable logic low, regulator off
0
0.4
V
Start-up Time
TS
No Load
20
s
EN Pull Down Resistor
RPD
3.0
M
VOUT
discharge
Resistor
RDCHG
Set EN pin at Low
60
Thermal
Shutdown
Temperature
TOTSD
160
Thermal
Shutdown
Hysteresis
THYOTSD
25
°C
SOT-23-5
96
SOIC-8
75
Thermal Resistance
θJC
SOT-89-5
47
°C /W
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