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参数资料
| 型号： | AP2145SG-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/13页 |
| 文件大小： | 0K |
| 描述： | IC SINGLE USB SWITCH 800MA 8SOIC |
| 标准包装： | 1 |
| 类型： | USB 开关 |
| 输出数： | 1 |
| Rds（开）： | 140 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 800mA |
| 输入电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1137 (CN2011-ZH PDF) |
| 其它名称： | AP2145SG-13DKR |
AP2145/ AP2155
Recommended Operating Conditions (@T A = +25°C, unless otherwise specified.)
Symbol
V IN
I OUT
V IL
V IH
T A
Parameter
Input voltage
Output Current
EN Input Logic Low Voltage
EN Input Logic High Voltage
Operating Ambient Temperature
Min
2.7
0
0
2.0
-40
Max
5.5
500
0.8
V IN
85
Unit
V
mA
V
V
? C
Electrical Characteristics (@T A = +25°C, V IN = +5.0V, unless otherwise specified.)
Symbol
V UVLO
Input UVLO
Parameter
R LOAD = 1k ?
Test Conditions
Min
1.6
Typ.
1.9
Max
2.5
Unit
V
I SHDN
I Q
I LEAK
I REV
Input Shutdown Current
Input Quiescent Current
Input Leakage Current
Reverse Leakage Current
Disabled, OUT = open
Enabled, OUT = open
Disabled, OUT grounded
Disabled, V IN = 0V, V OUT = 5V, I REV at V IN
-1
0.5
45
1
1
70
1
μA
μA
μA
μA
R DS(ON)
Switch On-Resistance
V IN = 5V, I OUT = 0.5A, -40°C ≤ T A ≤ +85°C
MSOP-8EP
SO-8
90
95
140
140
m ?
m ?
V IN = 3.3V, I OUT = 0.5A, -40°C ≤ T A ≤ +85°C
120
160
m ?
I SHORT
Short-Circuit Current Limit
Enabled into short circuit, C IN =10μF, C L = 100μF
0.7
A
I LIMIT
Over-Load Current Limit
V IN = 5V, V OUT = 4.5V, C IN =10μF, C L = 100μF,
-40°C ≤ T A ≤ +85°C
0.6
0.8
1.0
A
I TRIG
T SHORT
V IL
V IH
I SINK
I O-LEAK
T D(ON)
Current Limiting Trigger Threshold
Short-Circuit Response Time
EN Input Logic Low Voltage
EN Input Logic High Voltage
EN Input Leakage
Output Leakage Current
Output Turn-On Delay Time
Output Current Slew rate (<100A/s), C IN = 10μF, C L = 22μF
V OUT = 0V to I OUT = I LIMIT (short applied to output),
C L = 100μF
V IN = 2.7V to 5.5V
V IN = 2.7V to 5.5V
V EN = 5V
Disabled
C L = 1μF, R LOAD = 10 ?
2
1.0
10
0.05
0.8
1
1
A
μs
V
V
μA
μA
ms
T R
T D(OFF)
T F
R FLG
I FLG
Output Turn-On Rise Time
Output Turn-Off Delay Time
Output Turn-Off Fall Time
FLG Output FET On-Resistance
FLG Leakage Current
C L = 1μF, R LOAD = 10 ?
C L = 1μF, R LOAD = 10 ?
C L = 1μF, R LOAD = 10 ?
V IN = 3.3V or 5V, C IN = 10μF, I FLG = 10mA
V FLG = 5V
0.6
0.01
0.05
20
1
1.5
0.1
40
ms
ms
ms
?
μA
T BlLANK
T SHDN
FLG Blanking Time
Thermal Shutdown Threshold
V IN = 3.3V or 5V, C IN = 10μF, C L = 100μF
Enabled, R LOAD = 1k ?
4
7
135
15
ms
? C
T HYS
Thermal Shutdown Hysteresis
25
? C
θ JA
Thermal Resistance Junction-to-
Ambient
SO-8 (Note 5)
MSOP-8EP (Note 6)
110
60
? C/W
? C/W
Notes:
5. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
6. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer
and thermal vias to bottom layer ground plane.
AP2145/ AP2155
Document number: DS32031 Rev. 3 - 2
3 of 13
March 2013
? Diodes Incorporated
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