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参数资料
| 型号： | AP2151FMG-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 4/17页 |
| 文件大小： | 0K |
| 描述： | IC PWR SW USB 1CH 0.5A HI 6DFN |
| 产品变化通告： | Copper Bond Wire Change 13/Jan/2012 |
| 标准包装： | 1 |
| 类型： | USB 开关 |
| 输出数： | 1 |
| Rds（开）： | 115 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 800mA |
| 输入电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN 裸露焊盘 |
| 供应商设备封装： | 6-DFN2018（2.0x1.8） |
| 包装： | 标准包装 |
| 其它名称： | AP2151FMG-7DIDKR |
AP2141/ AP2151
Electrical Characteristics (@T A = +25°C, V IN = +5.0V, unless otherwise specified.)
Symbol
V UVLO
I SHDN
I Q
Parameter
Input UVLO
Input Shutdown Current
Input Quiescent Current
R LOAD = 1k ?
Disabled, I OUT = 0
Enabled, I OUT = 0
Conditions
Min
1.6
Typ
1.9
0.5
45
Max
2.5
1
70
Unit
V
μA
μA
I LEAK
I REV
Input Leakage Current
Reverse Leakage Current
Disabled, OUT grounded
Disabled, V IN = 0V, V OUT = 5V, I REV at V IN
1
1
μA
μA
R DS(ON) Switch On-Resistance
V IN = 5V,
I OUT = 0.5A
V IN = 3.3V,
SOT25, SO-8, MSOP-8EP
T A = +25°C
U-DFN2018-6
-40°C ≤ T A ≤ +85°C
T A = +25°C
95
90
120
115
110
140
140
m ?
I OUT = 0.5A
-40°C ≤ T A ≤ +85°C
170
I SHORT Short-Circuit Current Limit
Enabled into short circuit, C L = 22μF
0.6
A
I LIMIT
Over-Load Current Limit
V IN = 5V, V OUT = 4.8V, C L = 22μF, -40 ? C ≤ T A ≤ +85°C
0.6
0.8
1.0
A
I TRIG
I SINK
t D(ON)
Current Limiting Trigger Threshold
EN Input Leakage
Output Turn-On Delay Time
Output Current Slew rate (<100A/s) , C L = 22μF
V EN = 5V
C L = 1μF, R LOAD = 10 ?
1.0
0.05
1
A
μA
ms
t R
t D(OFF)
t F
R FLG
Output Turn-On Rise Time
Output Turn-Off delay Time
Output Turn-Off Fall Time
FLG Output FET On-Resistance
C L = 1μF, R LOAD = 10 ?
C L = 1μF, R LOAD = 10 ?
C L = 1μF, R LOAD = 10 ?
I FLG =10mA
0.6
0.01
0.05
20
1.5
0.1
40
ms
ms
ms
?
t BLANK
T SHDN
FLG Blanking Time
Thermal Shutdown Threshold
C IN = 10μF, C L = 22μF
Enabled, R LOAD = 1k ?
4
7
140
15
ms
? C
C/W
T HYS
Thermal Shutdown Hysteresis
SO-8 (Note 5)
25
110
o
? C
C/W
C/W
C/W
θ JA
Thermal Resistance Junction-to-
Ambient
MSOP-8EP (Note 6)
SOT25 (Note 7)
U-DFN2018-6 (Note 8)
60
157
70
o
o
o
Notes:
5. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
6. Test condition for SO-8, MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer
and thermal vias to bottom layer ground plane.
7. Test condition for SOT25: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
8. Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom
layer 1.0”x1.4” ground plane.
AP2141/ AP2151
Document number: DS31562 Rev. 7 - 2
4 of 17
March 2013
? Diodes Incorporated
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