参数资料
| 型号： | AP2156MPG-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 4/17页 |
| 文件大小： | 0K |
| 描述： | IC USB PWR SWITCH .5A DUAL 8MSOP |
| 产品变化通告： | Copper Bond Wire Change 13/Jan/2012 |
| 标准包装： | 1 |
| 类型： | USB 开关 |
| 输出数： | 2 |
| Rds（开）： | 135 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 800mA |
| 输入电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 |
| 供应商设备封装： | 8-MSOP-EP |
| 包装： | 标准包装 |
| 产品目录页面： | 1137 (CN2011-ZH PDF) |
| 其它名称： | AP2156MPGDIDKR |
AP2146/AP2156
Electrical Characteristics (@T A = +25°C, C IN = 10μF, V IN = +5V, unless otherwise specified.)
Symbol
V UVLO
I SHDN
I Q
Parameter
Input UVLO
Input Shutdown Current
Input Quiescent Current, Dual
R LOAD = 1k ?
Disabled, I OUT = 0
Enabled, I OUT = 0
Test Conditions
Min
1.6
Typ
1.9
0.5
95
Max
2.5
1
140
Unit
V
μA
μA
I LEAK
I REV
Input Leakage Current
Reverse Leakage Current
Disabled, OUT grounded
Disabled, V IN = 0V, V OUT = 5V, I REV at V IN
1
1
μA
μA
R DS(ON)
Switch on-resistance
V IN = 5V, I OUT = 0.5A, -40°C ≤ T A ≤ +85°C
MSOP-8EP
SO-8
90
100
135
135
m ?
m ?
V IN = 3.3V, I OUT = 0.5A, -40°C ≤ T A ≤ +85°C
120
160
m ?
I SHORT
Short-circuit current limit
Enabled into short circuit, C L = 68μF
0.7
A
I LIMIT
Over-Load Current Limit
V IN = 5V, V OUT = 4.8V, C L = 120μF, -40°C ≤ T A ≤ +85°C
0.6
0.8
1.0
A
I Trig
T SHORT
V IL
V IH
I SINK
T D(ON)
Current limiting trigger threshold
Short-circuit response time
EN Input Logic Low Voltage
EN Input Logic High Voltage
EN Input leakage
Output turn-on delay time
V IN = V EN , Output Current Slew rate (<100A/WS), C L = 22μF
V OUT = 0V to I OUT = I LIMIT (short applied to output), C L = 22μF
V IN = 2.7V to 5.5V
V IN = 2.7V to 5.5V
V EN = 5V
C L =1μF, R LOAD = 10 ?
2
1.0
20
0.05
0.8
1
A
μs
V
V
μA
ms
T R
T D(OFF)
T F
R FLG
Output turn-on rise time
Output turn-off delay time
Output turn-off fall time
FLG output FET on-resistance
C L =1μF, R LOAD = 10 ?
C L =1μF, R LOAD = 10 ?
C L =1μF, R LOAD = 10 ?
I FLG =10mA
0.6
0.01
0.05
20
1.5
0.1
40
ms
ms
ms
?
T Blank
T SHDN
FLG blanking time
Thermal shutdown threshold
C IN =10μF, C L = 68μF
Enabled, R LOAD = 1k ?
4
7
140
15
ms
? C
T HYS
Thermal shutdown hysteresis
25
? C
C/W
C/W
θ JA
Thermal Resistance Junction-to-Ambient
SO-8 (Note 5)
MSOP-8EP (Note 6)
110
60
o
o
Notes:
5. Test condition for SO-8: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad layout.
6. Test condition for MSOP-8EP: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom
layer ground plane.
AP2146/AP2156
Document number: DS31813 Rev. 3 - 2
4 of 17
www.diodes.com
March 2013
? Diodes Incorporated
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