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参数资料
| 型号： | AP2171FMG-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 4/18页 |
| 文件大小： | 0K |
| 描述： | IC PWR SW USB 1CH 1.0A LOW 6DFN |
| 产品变化通告： | Copper Bond Wire Change 13/Jan/2012 |
| 标准包装： | 1 |
| 类型： | USB 开关 |
| 输出数： | 1 |
| Rds（开）： | 115 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 1.5A |
| 输入电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN 裸露焊盘 |
| 供应商设备封装： | 6-DFN2018（2.0x1.8） |
| 包装： | 标准包装 |
| 其它名称： | AP2171FMG-7DIDKR |
AP2161/ AP2171
Electrical Characteristics (@T A = +25°C, V IN = +5V, unless otherwise specified.)
Symbol
V UVLO
I SHDN
I Q
Parameter
Input UVLO
Input Shutdown Current
Input Quiescent Current
R LOAD = 1k ?
Disabled, I OUT = 0
Enabled, I OUT = 0
Test Conditions
Min
1.6
Typ
1.9
0.5
45
Max
2.5
1
70
Unit
V
A
μA
I LEAK
I REV
Input Leakage Current
Reverse Leakage Current
Disabled, OUT grounded
Disabled, V IN = 0V, V OUT = 5V , I REV at V IN
1
1
μA
μA
R DS(ON)
Switch on-resistance
V IN = 5V,
I OUT = 1A
SOT25, MSOP-8EP, SO-8
T A = +25°C
U-DFN2018-6
-40°C ≤ T A ≤ +85°C
95
90
115
110
140
m ?
V IN = 3.3V,
I OUT = 1A
T A = +25°C
-40°C ≤ T A ≤ +85°C
120
140
170
I SHORT
Short-Circuit Current Limit
Enabled into short circuit, C L = 68μF
1.2
A
I LIMIT
Over-Load Current Limit
V IN = 5V, V OUT = 4.6V, C L = 68μF, -40°C ≤ T A ≤ +85°C
1.1
1.5
1.9
A
I Trig
I SINK
t D(ON)
Current limiting trigger threshold
EN Input leakage
Output turn-on delay time
Output Current Slew rate (<100A/s) , C L =68μF
V EN = 5V
C L = 1μF, R LOAD = 10 ?
2.0
0.05
1
A
μA
ms
t R
t D(OFF)
t F
Output turn-on rise time
Output turn-off delay time
Output turn-off fall time
C L = 1μF, R LOAD = 10 ?
C L = 1μF, R LOAD = 10 ?
C L = 1μF, R LOAD = 10 ?
0.6
0.01
0.05
1.5
0.1
ms
ms
ms
Fault Flag
R FLG
FLG output FET on-resistance
I FLG = 10mA
20
40
?
t Blank
FLG blanking time
C IN = 10μF, C L = 68μF
4
7
15
ms
Over-Temperature Protection
T SHDN
T HYS
θ JA
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Thermal Resistance Junction-to-
Ambient
Enabled, R LOAD = 1k ?
SO-8 (Note 5)
MSOP-8EP (Note 6)
SOT25 (Note 7)
U-DFN2018-6 (Note 8)
140
25
110
60
157
70
? C
? C
°C/W
°C/W
°C/W
°C/W
Notes:
5. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
6. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and
thermal vias to bottom layer ground plane.
7. Test condition for SOT25: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
8. Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom
layer 1.0”x1.4” ground plane.
AP2161/ AP2171
Document number: DS31564 Rev. 7 - 2
4 of 18
March 2013
? Diodes Incorporated
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