参数资料
| 型号： | AP2172AFGEG-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 4/16页 |
| 文件大小： | 0K |
| 描述： | IC PWR SWITCH 2CH USB 1A 8-DFN |
| 产品变化通告： | Copper Bond Wire Change 13/Jan/2012 |
| 标准包装： | 1 |
| 类型： | USB 开关 |
| 输出数： | 2 |
| Rds（开）： | 105 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 1.4A |
| 输入电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-DFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN3030E（3x3） |
| 包装： | 标准包装 |
| 其它名称： | AP2172AFGEG-7DIDKR |
AP2162A/ AP2172A
Electrical Characteristics (@T A = +25°C, V IN = +5.0V, unless otherwise specified.)
Symbol
Parameter
Test Conditions (Note 5)
Min
Typ
Max
Unit
V UVLO
I SHDN
I Q
I LEAK
I REV
R DS(ON)
Input UVLO
Input Shutdown Current
Input Quiescent Current, Dual
Input Leakage Current
Reverse Leakage Current
Switch On-Resistance
Disabled, I OUT = 0
Enabled, I OUT = 0
Disabled, OUT grounded
Disabled, V IN = 0V, V OUT = 5V, I REV a t V IN
SO-8
V IN = 5V, I OUT = 1A,
MSOP-8EP,
T A = +25°C
U-DFN3030-8
V IN = 5V, I OUT = 1A, -40°C ≤ T A ≤ +85°C
SO-8
V IN = 3.3V, I OUT = 1A,
MSOP-8EP,
T A = +25°C
U-DFN3030-8
1.6
2.0
0.1
115
0.01
90
85
110
105
2.4
1
180
1
0.1
110
105
135
130
125
V
μA
μA
μA
μA
m ?
V IN = 3.3V, I OUT = 1A, -40°C ≤ T A ≤ +85°C
170
I LIMIT
I LIMIT_G
Over-Load Current Limit
Ganged Over-Load Current Limit
V IN = 5V, V OUT = 4V, C L = 10μF
V IN = 5V, V OUT = 4.8V, OUT1 &
OUT2 tied together, C L = 10μF
-40°C ≤ T A ≤ +85°C
-40°C ≤ T A ≤ +85°C
1.1
2.2
1.4
2.8
1.7
3.4
A
A
I Trig
I Trig_G
I OS
Current Limiting Trigger Threshold
Ganged Current Limiting Trigger
Threshold
Short-Circuit Current per Channel
Output Current Slew rate (<100A/s), C L = 10μF
OUT1 & OUT2 tied together, Output Current Slew rate
(<100A/s), C L = 10μF
OUTx connected to ground, device enabled into short
circuit, C L = 10μF
1.8
3.6
1.4
A
A
A
I OS_G
Ganged Short-Circuit Current
OUT1 & OUT2 connected to ground, device enabled into
short-circuit, C L = 10μF
2.2
2.8
3.4
A
T SHORT
V IL
V IH
I SINK
Short-Circuit Response Time
EN Input Logic Low Voltage
EN Input Logic High Voltage
EN Input Leakage
V OUT = 0V to I OUT = I LIMIT (output shorted to ground)
V IN = 2.7V to 5.5V
V IN = 2.7V to 5.5V
V EN = 0V to 5.5V
2
2
0.8
1
μs
V
V
μA
I LEAK-O
T R
T F
T D(ON)
T D(OFF)
R FLG
I FOH
Output Leakage Current
Output Turn-On Rise Time
Output Turn-Off Fall Time
Output Turn-On Delay Time
Output Turn-Off Delay Time
FLG Output FET On-Resistance
FLG Off Current
Disabled, V OUT = 0V
C L = 1μF, R LOAD = 5 ?
C L = 1μF, R LOAD = 5 ?
C L = 100μF, R LOAD = 5 ?
C L = 100μF, R LOAD = 5 ?
I FLG = 10mA
V FLG = 5V
0.5
0.6
0.05
0.2
0.1
20
0.01
1
1.5
0.3
0.5
0.3
40
1
μA
ms
ms
ms
ms
?
μA
T Blank
R DIS
T SHDN
FLG Blanking Time
Discharge Resistance (Note 6)
Thermal Shutdown Threshold
C L = 10μF
V IN = 5V, disabled, I OUT =1mA
Enabled, R LOAD =1k ?
4
7
100
140
15
ms
?
? C
T HYS
Thermal Shutdown Hysteresis
SO-8 (Note 7)
25
115
? C
θ JA
Thermal Resistance Junction-to-Ambient MSOP-8EP (Note 8)
U-DFN3030-8 (Note 8)
75
60
°C/W
Notes:
5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
6. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up / power-down when V IN < V UVLO ). The
discharge function offers a resistive discharge path for the external storage capacitor for limited time.
7. Test condition for SO-8: Device mounted on FR-4 substrate PCB with minimum recommended pad layout.
8. Test condition for MSOP-8EP and U-DFN3030-8: Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top
layer and thermal vias to bottom layer ground plane.
AP2162A/ AP2172A
Document number: DS32192 Rev. 4 - 2
4 of 16
April 2013
? Diodes Incorporated
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