参数资料
型号: AP2191SG-13
厂商: Diodes Inc
文件页数: 3/17页
文件大小: 0K
描述: IC PWR SW USB 1CH 1.5A 8-SOIC
产品变化通告: Copper Bond Wire Change 13/Jan/2012
标准包装: 1
类型: USB 开关
输出数: 1
Rds(开): 160 毫欧
内部开关:
电流限制: 2.1A
输入电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 标准包装
产品目录页面: 1137 (CN2011-ZH PDF)
其它名称: AP2191SGDIDKR
AP2181/ AP2191
Functional Block Diagram
AP2181, AP2191
IN
UVLO
Current
Sense
OUT
EN
Driver
Thermal
Current
Limit
Deglitch
FLG
Sense
GND
Absolute Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Symbol
ESD HBM
ESD MM
V IN
V OUT
V EN , V FLG
I LOAD
T J(MAX)
T ST
Parameter
Human Body Model ESD Protection
Machine Model ESD Protection
for MSOP-8EP, SOT25 packages
Machine Model ESD Protection
for U-DFN2018-6, SO-8 packages
Input Voltage
Output Voltage
Enable Voltage
Maximum Continuous Load Current
Maximum Junction Temperature
Storage Temperature Range (Note 4)
Ratings
4
400
300
6.5
V IN +0.3
6.5
Internal Limited
150
-65 to +150
Units
kV
V
V
V
V
V
A
°C
°C
Caution:
Note:
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling
and transporting these devices
4. UL Recognized Rating from -30°C to +70°C (Diodes qualified T ST from -65°C to +150°C)
Recommended Operating Conditions (@T A = +25°C, unless otherwise specified.)
Symbol
V IN
I OUT
T A
V IH
V IL
Parameter
Input voltage
Output Current
Operating Ambient Temperature
High-Level Input Voltage on EN or EN
Low-Level Input Voltage on EN or EN
Min
2.7
0
-40
2.0
0
Max
5.5
1.5
85
V IN
0.8
Units
V
A
? C
V
V
AP2181/ AP2191
Document number: DS31563 Rev. 7 - 2
3 of 17
March 2013
? Diodes Incorporated
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