参数资料
型号: AP2302AGN-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 4.6 A, 20 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 3/4页
文件大小: 94K
代理商: AP2302AGN-HF
AP2302AGN-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
01
23
4
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
5.0V
4.5V
3.5V
2.5V
V G =2.0V
0
4
8
12
16
20
01
234
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
5.0V
4.5V
3.5V
2.5V
V G =2.0V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
V
GS(t
h)
(V
)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =4A
V G =4.5V
20
30
40
50
0123456
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =3A
T A =25
o C
I D =250uA
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