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参数资料
| 型号： | AP2304AGN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 2.5 A, 30 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 110K |
| 代理商： | AP2304AGN-HF |
AP2304AGN-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
2
4
6
8
10
0123
4567
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
Current
(
A
)
T A =25
o C
10V
6.0V
5.0V
4.0V
V G =3.0V
0
2
4
6
8
10
01
2345
67
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
Current
(
A
)
T A =150
o C
10V
6.0V
5.0V
4.0V
V G =3.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
No
rm
a
lized
R
DS(ON)
V G =10V
I D =2.5A
0.01
0.10
1.00
10.00
0.1
0.5
0.9
1.3
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
1.25
1.45
1.65
1.85
2.05
-50
0
50
100
150
T j , Junction Temperature (
o C)
V
GS(
th)
(V)
70
80
90
100
110
120
130
140
3579
11
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =2A
T A =25
o C
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PDF描述 |
|---|---|
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| AP2332GN-HF | 27 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2304AN | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2304GN | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2304GN-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small package outline |
| AP2304N | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP2305AGN | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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