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参数资料
| 型号： | AP2305CGN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 3.2 A, 30 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 57K |
| 代理商： | AP2305CGN-HF |
AP2305CGN-HF
65mΩ
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D = -3A
V GS = -4.5V
0
4
8
12
16
20
01
23
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T A =25
o C
-5.0V
-4.5V
-3.5V
-3.0V
V G = -2.5V
0
2
4
6
8
10
12
0123
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
-5.0V
-4.5V
-3.5V
-3.0V
V G = -2.5V
T A = 150
o C
0
1
2
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
40
60
80
100
120
02
46
8
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D = -2A
T A =25
o C
I D = -1mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2305GN | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2305GN-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Package Outline |
| AP2305N | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP2306AGEN-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Small Outline Package |
| AP2306AGN | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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