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参数资料
| 型号： | AP2306CGN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 5.5 A, 20 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 93K |
| 代理商： | AP2306CGN-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Capable of 2.5V gate drive
BVDSS
20V
▼ Lower on-resistance
RDS(ON)
30mΩ
▼ Surface mount package
ID
5.5A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
90
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
1.38
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current
3, V
GS @ 4.5V
4.4
Pulsed Drain Current
1
20
Gate-Source Voltage
+12
Continuous Drain Current
3, V
GS @ 4.5V
5.5
Parameter
Rating
Drain-Source Voltage
20
1
AP2306CGN-HF
200904271
Halogen-Free Product
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
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PDF描述 |
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| AP2322GN | 2500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2306CGTN-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Lower On-resistance |
| AP2306GN | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2306GN-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V gate drive, Lower on-resistance |
| AP2306N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP23-06S | 制造商:Banner Engineering 功能描述:AP23-06S APERTURE Q23 SERIES SHAPE=SLOT SIZE=.060IN |
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