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参数资料
| 型号： | AP2309AGN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 3.4 A, 30 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 94K |
| 代理商： | AP2309AGN-HF |
AP2309AGN-HF
65mΩ
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
R
DS(
ON)
I D = -3A
V GS = -10V
0
4
8
12
16
20
012
345
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T A =25
o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
0
4
8
12
16
20
0123
456
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
V G = -4.0V
-10V
-7.0V
-6.0V
-5.0V
T A = 150
o C
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
40
50
60
70
80
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(
Ω
)
I D = -2A
T A =25
o C
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| AP2317GN-HF | 4.2 A, 20 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2309GEN-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Package Outline |
| AP2309GN | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2309GN-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Package Outline |
| AP2309GN-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET PCH -30V 75MOHM SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 75MOHM, SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 75MOHM, SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:-3.7A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.075ohm, Rds(on) Test Voltage Vgs:-10V, Power Dissipation Pd:1.38W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, PCH, -30V, 75MOHM, SOT-23, Transistor Polarity:P Channel, Continuous Dra |
| AP2309N | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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