- 您现在的位置：买卖IC网 > PDF目录36692 > AP2319GN-HF (ADVANCED POWER ELECTRONICS CORP) 3.1 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | AP2319GN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 3.1 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 99K |
| 代理商： | AP2319GN-HF |
AP2319GN-HF
65mΩ
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D = -2.8A
V GS = -10V
0
10
20
30
02468
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T A =25
o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
0
2
4
6
8
10
12
012
34
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
V G = -4.0V
-10V
-7.0V
-6.0V
-5.0V
T A = 150
o C
0
1
2
3
4
5
6
0
0.4
0.8
1.2
1.6
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0.6
0.7
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
60
70
80
90
100
110
120
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(
Ω
)
I D = -2A
T A =25
o C
相关PDF资料 |
PDF描述 |
|---|---|
| AP2320GN-HF | 250 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AP2326GN-HF | 4.7 A, 30 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP2328GN-HF | 4 A, 30 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP2338GN-HF | 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP2530AGY-HF | 30 V, 0.072 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2319GN-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET PCH -30V 90MOHM SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 90MOHM, SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 90MOHM, SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:-3.1A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.097ohm, Rds(on) Test Voltage Vgs:-4.5V, Power Dissipation Pd:1.38W, Operating, RoHS Compliant: Yes |
| AP231SQ | 制造商:Thomas & Betts 功能描述:POST BASE GOLDGALV |
| AP232 | 制造商:Thomas & Betts 功能描述:POST BASE |
| AP232 GR | 制造商:Thomas & Betts 功能描述:SSTRUT FITTINGS/BRACKETS |
| AP232 PVC | 制造商:Thomas & Betts 功能描述:PVC FINISH POST BASES |
发布紧急采购，3分钟左右您将得到回复。