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参数资料
| 型号： | AP2328GN-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 30 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 94K |
| 代理商： | AP2328GN-HF |
AP2328GN-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
30
40
50
60
70
80
024
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =2A
T A =25
o C
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =3A
V G =4.5V
0.0
1.0
2.0
3.0
4.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0
4
8
12
16
20
01
23
45
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
5.0V
4.5V
3.5V
3.0V
V G = 2.5V
0
4
8
12
16
20
01
234
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
5.0V
4.5V
3.5V
3.0V
V G = 2.5V
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2329GN-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Package Outline |
| AP232EG | 制造商:Thomas & Betts 功能描述:POST BASE |
| AP232FL | 制造商:Thomas & Betts 功能描述:FLUSH STYLE POST BASE GOLDGALV |
| AP232FL EG | 制造商:Thomas & Betts 功能描述:SS AP232FLEG FLUSH STYLE POST BASE |
| AP232HDG | 制造商:Thomas & Betts 功能描述:STRUT, POSTBASE, DIAGONAL |
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