参数资料
型号: AP2330GN-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 1.7 A, 90 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 93K
代理商: AP2330GN-HF
AP2330GN-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
0
2
4
6
8
10
12
024
68
10
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = 1.5A
V DS =80V
0
100
200
300
400
500
600
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Nor
m
aliz
ed
T
h
er
mal
R
es
pons
e(R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
t
T
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Operation in this
area limited by
RDS(ON)
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