参数资料
| 型号： | AP2401FGE-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 4/18页 |
| 文件大小： | 0K |
| 描述： | IC USB SWITCH DFN3030-8 |
| 标准包装： | 1 |
| 类型： | 高端开关 |
| 输出数： | 1 |
| Rds（开）： | 84 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 2.75A |
| 输入电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-UDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN3030（3x3） |
| 包装： | 标准包装 |
| 其它名称： | AP2401FGE-7DIDKR |
AP2401/AP2411
Electrical Characteristics (@T A = +25°C, V IN = +5.0V, C IN = 0.1μF, C L = 1μF, unless otherwise specified.)
Symbol Parameter
Test Conditions (Note 5)
Min
Typ
Max
Unit
V UVLO
Δ V UVLO
I SHDN
I Q
I LEAK
I REV
Input UVLO
Input UVLO Hysteresis
Input Shutdown Current
Input Quiescent Current
Input Leakage Current
Reverse Leakage Current
V IN rising
V IN decreasing
Disabled, OUT = open
Enabled, OUT = open
Disabled, OUT grounded
Disabled, V IN = 0V, V OUT = 5V, I REV at V IN
1.6
2.0
50
0.1
60
0.1
0.01
2.4
1
100
1
1
V
mV
μA
μA
μA
μA
R DS(ON)
Switch on-resistance
V IN = 5V, I OUT = 2.0A
V IN = 3.3V, I OUT = 2.0A
T A = +25°C
-40°C ≤ T A ≤ +85°C
T A = +25°C
-40°C ≤ T A ≤ +85°C
70
90
84
105
108
135
m ?
I LIMIT
Over-Load Current Limit
(Note 6)
V IN = 5V, V OUT = 4.5V
-40°C ≤ T A ≤ +85°C
2.05
2.5
2.85
A
I Trig
Current limiting trigger threshold
Output Current Slew rate (< 100A/s)
2.5
A
I SHORT
Short-Circuit Current Limit
Enabled into short circuit
2.1
2.75
3.3
A
T SHORT
V IL
V IH
Short-circuit Response Time
EN Input Logic Low Voltage
EN Input Logic High Voltage
V OUT = 0V to I OUT = I LIMIT (OUT shorted to ground)
V IN = 2.7V to 5.5V
V IN = 2.7V to 5.5V
2
2
0.8
μs
V
V
I LEAK-EN
I LEAK-O
T D(ON)
T R
T D(OFF)
T F
R FLG
I FOH
EN Input leakage
Output leakage current
Output turn-on delay time
Output turn-on rise time
Output turn-off delay time
Output turn-off fall time
FLG output FET on-resistance
FLG Off Current
V IN = 5V, V EN = 0V and 5.5V
Disabled, V OUT = 0V
C L = 1μF, R LOAD = 5 ?
C L = 1μF, R LOAD = 5 ?
C L = 1μF, R LOAD = 5 ?
C L = 1μF, R LOAD = 5 ?
I FLG = 10mA
V FLG = 5V
0.01
0.5
0.1
0.6
0.1
0.05
20
0.01
1
1
1.5
0.1
40
1
μA
μA
ms
ms
ms
ms
?
μA
T BLANK
T DIS
R DIS
T SHDN
FLG blanking and latch off time
Discharge time
Discharge resistance (Note 7)
Thermal Shutdown Threshold
Assertion or deassertion due to overcurrent and over-
temperature condition
C L = 1μF, V IN = 5V, disabled to V OUT < 0.5V
V IN = 5V, disabled, I OUT = 1mA
Enabled
4
7
0.6
100
140
15
ms
ms
?
°C
T HYS
Thermal Shutdown Hysteresis
SO-8 (Note 8)
20
96
°C
°C/W
θ JA
Thermal Resistance Junction-to-
Ambient
MSOP-8 (Note 8)
MSOP-8EP (Note 9)
U-DFN3030-8 (Note 9)
U-DFN2020-6 (Note 10)
130
92
84
90
°C/W
°C/W
°C/W
°C/W
Notes:
6. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
7. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when V IN < V UVLO .
The discharge function offers a resistive discharge path for the external storage capacitor for limited time.
8. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.
10. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground.
AP2401/AP2411
Document number: DS35113 Rev. 6 - 2
4 of 18
March 2013
? Diodes Incorporated
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