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参数资料
| 型号： | AP2530AGY-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.072 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 5/7页 |
| 文件大小： | 121K |
| 代理商： | AP2530AGY-HF |
AP2530AGY-HF
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
01
23
45
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =3 A
V DS =15 V
0
100
200
300
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T A =25
o C
Single Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.02
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 180℃/W
t
T
0.01
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Operation in this
area limited by
RDS(ON)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2530G10ST | 制造商:Schneider Electric 功能描述:BUSWAY PLUGIN STRAIGHT LENGTH 10FT 3000A |
| AP2530GY | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP2530GY-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET 30V N72/P150MOHM SOT-26 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, 30V, N72/P150MOHM, SOT-26 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, 30V, N72/P150MOHM, SOT-26, Transistor Polarity:N and P Channel, Continuous Drain Current Id:3.3A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.072ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:1.14W, , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, 30V, N72/P150MOHM, SOT-26, Transistor Polarity:N and P Channel, Continuo |
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