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参数资料
| 型号： | AP25N10GJ-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 100K |
| 代理商： | AP25N10GJ-HF |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP25N10GH/J-HF
Q
VG
10V
QGS
QGD
QG
Charge
1
10
100
1000
10000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
14
0
4
8
12
16
20
24
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =64 V
V DS =80 V
V DS = 100 V
I D =16 A
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
5
10
15
20
25
02
46
8
10
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =25
o C
V DS =5V
T j =150
o C
相关PDF资料 |
PDF描述 |
|---|---|
| AP25N10GH-HF | 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP25N10GP-HF | 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP25N10GS-HF | 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP25P15GI | 23 A, 140 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP2606AGY-HF | 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP25N10GP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP25N10GS-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP25P15GI | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP25P15GS-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP25SD | 功能描述:整流器/与可变电容器 125Volts 1.0pF -23pF RoHS:否 制造商:Xicon 电容范围:2.8 pF to 12.5 pF 容差: 电压额定值:200 V 工作温度范围:- 35 C to + 85 C 端接类型:SMD/SMT 产品:Trimmer Capacitors - Ceramic Dielectric |
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