参数资料
型号: AP2609GYT-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 20 V, 0.018 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: 3 X 3 MM, 1 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件页数: 1/4页
文件大小: 58K
代理商: AP2609GYT-HF
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
-20V
▼ Small Size & Lower Profile
RDS(ON)
18mΩ
▼ RoHS Compliant & Halogen-Free
ID
-11.3A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
6
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
35
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current
3
-9
Pulsed Drain Current
1
-40
Storage Temperature Range
3.57
-55 to 150
-20
+8
-11.3
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
AP2609GYT-HF
Rating
Halogen-Free Product
201102101
1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK
3x3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
D
S
G
PMPAK
3x3
G
D
S
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参数描述
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