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参数资料
| 型号： | AP2625GY |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 30 V, 0.185 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 96K |
| 代理商： | AP2625GY |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
-30V
▼ Low Gate Drive
RDS(ON)
185mΩ
▼ Surface Mount Package
ID
- 2A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
110
℃/W
Data and specifications subject to change without notice
201023073-1/4
AP2625GY
Rating
-30
±12
-2.0
0.01
RoHS-compliant Product
Continuous Drain Current
3
-1.6
Pulsed Drain Current
1
-20
1.2
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
-55 to 150
Linear Derating Factor
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for commercial-industrial applications.
D1
S1
G1
S2
G2
D2
SOT-26
G2
D2
S2
G1
D1
S1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2625Y | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2626GY | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2626GY-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Smaller Outline Package |
| AP2648 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
| AP26G40GEO-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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