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参数资料
| 型号： | AP26G40GEO-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 400 V, N-CHANNEL IGBT |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8 |
| 文件页数： | 3/3页 |
| 文件大小： | 55K |
| 代理商： | AP26G40GEO-HF |
AP26G40GEO-HF
Fig 7. Typical Capacitance Characterisitics
Fig 8. Maximum Pulse Collector Current
Fig 9. Switching Time Test Circuit
Fig 10. Switching Time Waveform
Fig 11. Gate Charge Test Circuit
Fig 12. Gate Charge Waveform
3
td(on) tr
td(off) tf
VCE
VGE
10%
90%
TO THE
OSCILLOSCOPE
-
+
4V
C
G
E
VCE
VGE
RG
RC
VCC=320 V
10
100
1000
10000
1
5
9
1317
212529
3337
V CE , Collector-Emitter Voltage (V))
C
(
p
F)
f=1.0MHz
C ies
C oes
C res
0
1
2
3
4
5
6
0
40
80
120
160
Q G , Gate Charge (nC)
V
GE
,
G
a
te
-
E
mitte
rVoltage
(
V
)
I CP =40A
V CE =200V
0
40
80
120
160
12
345
67
V GE , Gate-to-Emitter Voltage (V)
I
CP
,
Pe
ak
C
o
lle
c
tor
C
u
rre
n
t(
A
)
T C =70
o C
VCC=200V
TO THE
OSCILLOSCOPE
-
+
C
G
VCE
VGE
IC
IG
1~3mA
E
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