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参数资料
| 型号： | AP2762I-A |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 117K |
| 代理商： | AP2762I-A |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
650
-
V
RDS(ON)
Static Drain-Source On-Resistance
3
VGS=10V, ID=3A
-
1.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
3.5
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
±100
nA
Qg
Total Gate Charge
3
ID=6A
-
31
50
nC
Qgs
Gate-Source Charge
VDS=200V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
13
-
nC
td(on)
Turn-on Delay Time
3
VDD=200V
-
33
-
ns
tr
Rise Time
ID=3A
-
29
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
186
-
ns
tf
Fall Time
RD=67Ω
-46
-
ns
Ciss
Input Capacitance
VGS=0V
-
1330
2130
pF
Coss
Output Capacitance
VDS=30V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
3
IS=6A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
3
IS=6A, VGS=0V,
-
475
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
6.4
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
2
AP2762I-A
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