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参数资料
| 型号： | AP28G40GEO |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 400 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, TSSOP-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 103K |
| 代理商： | AP28G40GEO |
Advanced Power
N-CHANNEL INSULATED GATE
Electronics Corp.
BIPOLAR TRANSISTOR
▼ High Input Impedance
VCE
▼ High Peak Current Capability
ICP
▼ Low Gate Drive
▼ Strobe Flash Applications
Absolute Maximum Ratings
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Min.
Typ.
Max.
Units
IGES
-
±10
uA
ICES
-
10
uA
VCE(sat)
-
3.8
7
V
-
4.2
-
V
VGE(th)
0.3
-
1.2
V
Qg
-
76
130
nC
Qge
-4
-
nC
Qgc
-26
-
nC
td(on)
-
220
-
ns
tr
-
800
-
ns
td(off)
-
1.6
-
s
tf
-
1.5
-
s
Cies
-
4485
8240
pF
Coes
-44
-
pF
Cres
-40
-
pF
RthJA
1
-
125
℃/W
Notes:
1.Surface mounted on 1 in
2 copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
IC=40A
Parameter
TSTG
VGE=± 6V, VCE=0V
VCE=400V, VGE=0V
VGE=4V, ICP=150A (Pulsed)
VCE=VGE, IC=250uA
VGE=2.8V, ICP=150A (Pulsed)
Thermal Resistance Junction-Ambient
VGE=4V
Fall Time
Input Capacitance
Output Capacitance
f=1.0MHz
Rise Time
Gate-Collector Charge
Turn-on Delay Time
Turn-off Delay Time
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current
Gate-Emitter Charge
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
AP28G40GEO
Symbol
VCE
400V
150A
Rating
Collector-Emitter Voltage
Units
Parameter
RoHS-compliant Product
TJ
V
400
Storage Temperature Range
Pulsed Collector Current, VGE @ 4V
A
-55 to 150
℃
W
V
Maximum Power Dissipation
VGE
ICP
PD@TA=25℃
1
Gate-Emitter Voltage
± 6
150
201031072-1/3
℃
VCC=320V
Operating Junction Temperature Range
150
1
Test Conditions
Reverse Transfer Capacitance
VCE=200V
VGE=4V
VCE=30V
RG=10Ω
IC=160A
VGE=0V
G
C
E
G
E
C
TSSOP-8
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