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参数资料
| 型号： | AP30P10GS |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 25 A, 100 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, TO-263, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 93K |
| 代理商： | AP30P10GS |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
-100V
▼ Simple Drive Requirement
RDS(ON)
80mΩ
▼ Fast Switching Characteristic
ID
-25A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃
/W
Rthj-a
40
℃
/W
Data and specifications subject to change without notice
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
AP30P10GS
Rating
-100
+20
-25
RoHS-compliant Product
-15
Thermal Data
Parameter
Pulsed Drain Current
1
-80
-55 to 150
89
Total Power Dissipation
200906192
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
1
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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