参数资料
型号: AP30T10GH-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 19 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 1/4页
文件大小: 57K
代理商: AP30T10GH-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower Gate Charge
RDS(ON)
55mΩ
▼ Fast Switching Characteristic
ID
19A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
℃/W
Rthj-a
62.5
℃/W
Data and specifications subject to change without notice
AP30T10GH-HF
Halogen-Free Product
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
19
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
12
Pulsed Drain Current
1
60
Total Power Dissipation
44.6
-55 to 150
Total Power Dissipation
2
Operating Junction Temperature Range
-55 to 150
201008231
Thermal Data
Parameter
1
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
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