参数资料
型号: AP34M60B
厂商: MICROSEMI CORP
元件分类: JFETs
英文描述: 34 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
封装: ROHS COMPLIANT, 3 PIN
文件页数: 1/4页
文件大小: 396K
代理商: AP34M60B
N-Channel MOSFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die MOSFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
inlbf
Nm
Ratings
34
21
124
±30
930
17
Min
Typ
Max
624
0.20
0.15
-55
150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J,TSTG
T
L
W
T
Torque
TYPICAL APPLICATIONS
PFC and other boost converter
Buck converter
Two switch forward (asymmetrical bridge)
Single switch forward
Flyback
Inverters
FEATURES
Fast switching with low EMI/RFI
Low RDS(on)
Ultra low Crss for improved noise immunity
Low gate charge
Avalanche energy rated
RoHS compliant
TO-247
D3PAK
AP34M60B
AP34M60S
600V, 34A, 0.21 Max
APT34M60B
APT34M60S
Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
Microsemi Website - http://www.microsemi.com
050-8076
Rev
A
9-2006
相关PDF资料
PDF描述
AP34M60S 34 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET
AP3986I 6 A, 620 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP3986P 6 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP3987I 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP3987R 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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