- 您现在的位置：买卖IC网 > PDF目录36693 > AP3986P (ADVANCED POWER ELECTRONICS CORP) 6 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | AP3986P |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 96K |
| 代理商： | AP3986P |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
600
-
V
RDS(ON)
Static Drain-Source On-Resistance
3
VGS=10V, ID=3A
-
1.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=3A
-
2.8
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
100
uA
Drain-Source Leakage Current (Tj=125
oC)
VDS=480V, VGS=0V
-
250
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
±100
nA
Qg
Total Gate Charge
3
ID=3A
-
34
55
nC
Qgs
Gate-Source Charge
VDS=300V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
15
-
nC
td(on)
Turn-on Delay Time
3
VDD=300V
-
30
-
ns
tr
Rise Time
ID=3A
-
32
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
205
-
ns
tf
Fall Time
RD=100Ω
-55
-
ns
Ciss
Input Capacitance
VGS=0V
-
1310
2100
pF
Coss
Output Capacitance
VDS=25V
-
210
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
3
IS=3A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
3
IS=3A, VGS=0V
-
400
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
4.2
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP3986P
2
相关PDF资料 |
PDF描述 |
|---|---|
| AP3987I | 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP3987R | 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AP3988I-HF | 9 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP3989I | 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP3989P | 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP3987I | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3987P | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3987R | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3988I-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3988MTR-G1 | 功能描述:Converter Offline Flyback Topology 60kHz 7-SO 制造商:diodes incorporated 系列:- 包装:剪切带（CT） 零件状态:有效 输出隔离:隔离 内部开关:是 电压 - 击穿:700V 拓扑:回扫 电压 - 启动:15V 电压 - 电源（Vcc/Vdd）:5.8 V ~ 25 V 占空比:- 频率 - 开关:60kHz 功率（W）:5.5W 故障保护:超温，过压，短路 控制特性:- 工作温度:-40°C ~ 85°C（TA） 封装/外壳:8-SOIC（0.154"，3.90mm 宽）7 引线 供应商器件封装:7-SO 安装类型:表面贴装 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。