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参数资料
| 型号： | AP3987I |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 117K |
| 代理商： | AP3987I |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP3987I
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
2
4
6
8
10
12
0
2040
6080
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =7A
V DS =480V
0
1000
2000
3000
4000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
0.01
0.1
1
10
100
1
10
100
1000
10000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
10us
1ms
10ms
100ms
1s
DC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP3987P | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3987R | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3988I-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3988MTR-G1 | 功能描述:Converter Offline Flyback Topology 60kHz 7-SO 制造商:diodes incorporated 系列:- 包装:剪切带（CT） 零件状态:有效 输出隔离:隔离 内部开关:是 电压 - 击穿:700V 拓扑:回扫 电压 - 启动:15V 电压 - 电源（Vcc/Vdd）:5.8 V ~ 25 V 占空比:- 频率 - 开关:60kHz 功率（W）:5.5W 故障保护:超温，过压，短路 控制特性:- 工作温度:-40°C ~ 85°C（TA） 封装/外壳:8-SOIC（0.154"，3.90mm 宽）7 引线 供应商器件封装:7-SO 安装类型:表面贴装 标准包装:1 |
| AP3988P-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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