- 您现在的位置：买卖IC网 > PDF目录36693 > AP3987R (ADVANCED POWER ELECTRONICS CORP) 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA PDF资料下载
参数资料
| 型号： | AP3987R |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, TO-262, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 98K |
| 代理商： | AP3987R |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP3987R
0.8
0.9
1
1.1
1.2
1.3
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
4
8
12
16
20
0
4
8
1216
2024
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(ON)
I D =4A
V G =10V
0
2
4
6
8
10
12
0
8
16
24
32
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
7 .0V
6 .0V
5.0V
V G =4.0 V
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A)
T j = 150
o CT
j = 25
o C
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
相关PDF资料 |
PDF描述 |
|---|---|
| AP3988I-HF | 9 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP3989I | 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP3989P | 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP3990I | 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP3R604AGH-HF | 75 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP3988I-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3988MTR-G1 | 功能描述:Converter Offline Flyback Topology 60kHz 7-SO 制造商:diodes incorporated 系列:- 包装:剪切带（CT） 零件状态:有效 输出隔离:隔离 内部开关:是 电压 - 击穿:700V 拓扑:回扫 电压 - 启动:15V 电压 - 电源（Vcc/Vdd）:5.8 V ~ 25 V 占空比:- 频率 - 开关:60kHz 功率（W）:5.5W 故障保护:超温，过压，短路 控制特性:- 工作温度:-40°C ~ 85°C（TA） 封装/外壳:8-SOIC（0.154"，3.90mm 宽）7 引线 供应商器件封装:7-SO 安装类型:表面贴装 标准包装:1 |
| AP3988P-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3989I-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3989P | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
发布紧急采购，3分钟左右您将得到回复。