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参数资料
| 型号： | AP3R303GMT-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 31 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
| 文件页数： | 4/4页 |
| 文件大小： | 96K |
| 代理商： | AP3R303GMT-HF |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP3R303GMT-HF
1
10
100
1000
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
0
4
8
12
16
20
24
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =30A
V DS =15V
V DS =18V
V DS =24V
0
400
800
1200
1600
2000
1
5
9
131721
2529
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
4.5V
QGS
QGD
QG
Charge
td(on) tr
td(off) tf
VDS
VGS
10%
90%
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相关代理商/技术参数 |
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| AP3R604AGH-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic |
| AP3R604GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
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| AP3R604GMT-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 40V 3.6MOHM PMPAK5X6 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 40V, 3.6MOHM, PMPAK5X6 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 40V, 3.6MOHM, PMPAK5X6, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0036ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:83.3W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 40V, 3.6MOHM, PMPAK5X6, Transistor Polarity:N Channel, Continuous D |
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