参数资料
型号: AP42T03GP
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 30 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 1/5页
文件大小: 149K
代理商: AP42T03GP
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Low Gate Charge
RDS(ON)
22mΩ
▼ Fast Switching Characteristic
ID
30A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@Tc=25℃
A
ID@Tc=100℃
A
IDM
A
PD@Tc=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
AP42T03GP
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
30
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current, VGS @ 10V
18
Pulsed Drain Current
1
120
Storage Temperature Range
Total Power Dissipation
27.8
-55 to 150
200811271
Thermal Data
Parameter
1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220(P)
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
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