参数资料
型号: AP4407GS
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 50 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: ROHS COMPLIANT, TO-263, 3 PIN
文件页数: 1/6页
文件大小: 218K
代理商: AP4407GS
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower On-resistance
BVDSS
-30V
▼ Simple Drive Requirement
RDS(ON)
14mΩ
▼ Fast Switching Characteristic
ID
-50A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
2.3
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
200808192
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
-55 to 150
Linear Derating Factor
54
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
-32
Pulsed Drain Current
1
180
1
AP4407GS/P
Rating
-30
+25
-50
0.4
RoHS-compliat Product
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G D
S
TO-263(S)
G
D
S
TO-220(P)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP4407GP) are
available for low-profile applications.
相关PDF资料
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AP4407GP 50 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
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相关代理商/技术参数
参数描述
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