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参数资料
| 型号： | AP4409AGEM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 14.5 A, 35 V, 0.0075 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 182K |
| 代理商： | AP4409AGEM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-35
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-7A
-
7.5
mΩ
VGS=-4V, ID=-7A
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-10
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-24V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±30
uA
Qg
Total Gate Charge
2
ID=-14A
-
58
90
nC
Qgs
Gate-Source Charge
VDS=-30V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
37
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
15
-
ns
tr
Rise Time
ID=-1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
76
-
ns
tf
Fall Time
RD=15Ω
-60
-
ns
Ciss
Input Capacitance
VGS=0V
-
4100
6600
pF
Coss
Output Capacitance
VDS=-25V
-
640
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
530
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-14A, VGS=0V
-
-1.3
V
t
rr
Reverse Recovery Time
2
IS=-14A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
44
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3.Surface mounted on 1 in
2 copper pad of FR4 board （a）, t <10sec
2
AP4409AGEM
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
(a) 1 in
2 pad of
2 oz copper
(b) 125℃/W when
mounted on a 0.003
in
2 pad of 2 oz copper
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP4409AGM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4409GEM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4409GEP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic |
| AP4409GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4410AGM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
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