参数资料
型号: AP4430GM-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 20 A, 35 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件页数: 4/4页
文件大小: 93K
代理商: AP4430GM-HF
AP4430GM-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
0
10
203040
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =15 V
I D =12 A
0
400
800
1200
1600
2000
2400
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Operation in this area
limited by RDS(ON)
相关PDF资料
PDF描述
AP4434GM 20 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET
AP4436GM 20 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
AP4439GH-HF 58 A, 30 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP4439GM9-HF 13.3 A, 30 V, 0.01 ohm, P-CHANNEL, Si, POWER, MOSFET
AP4451GYT-HF 30 V, 0.0145 ohm, P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
AP443-28146-2 制造商:Sensata Technologies 功能描述:AP443-28146-2 /Pole # 3 /Prod Family: 0202
AP4432GM 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Fast Switching Characteristic
AP4433GH-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement
AP4433GM-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge
AP4434AGM-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Capable of 1.8V Gate Drive