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参数资料
| 型号： | AP4434GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 20 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 176K |
| 代理商： | AP4434GM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V, ID=8A
-
18.5
mΩ
VGS=2.5V, ID=4A
-
25
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.3
-
1
V
gfs
Forward Transconductance
VDS=5V, ID=4A
-
9
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=20V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=16V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
±100
nA
Qg
Total Gate Charge
2
ID=8A
-
17
27
nC
Qgs
Gate-Source Charge
VDS=16V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
5.8
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
9
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
26
-
ns
tf
Fall Time
RD=10Ω
-
7.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
940
1500
pF
Coss
Output Capacitance
VDS=20V
-
175
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=2.1A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=8A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
AP4434GM
2/4
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP4435D | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4435GH-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower On-resistance |
| AP4435GH-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET PCH -30V 20MOHM TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 20MOHM, TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 20MOHM, TO-252, Transistor Polarity:P Channel, Continuous Drain Current Id:-40A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.02ohm, Rds(on) Test Voltage Vgs:-10V, Power Dissipation Pd:44.6W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, PCH, -30V, 20MOHM, TO-252, Transistor Polarity:P Channel, Continuous Dra |
| AP4435GJ-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower On-resistance |
| AP4435GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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