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参数资料
| 型号： | AP4435GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 216K |
| 代理商： | AP4435GH |
AP4435GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
20
40
60
80
100
01
234
56
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
-10V
-7.0V
-6.0V
-5.0V
V G =- 4 .0 V
0.6
1.0
1.4
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D = - 26 A
V G =-10V
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
0.0
6.5
13.0
19.5
26.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0
20
40
60
80
02
468
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
-10V
-7.0V
-6.0V
-5.0V
V G =- 4 .0 V
14
18
22
26
30
246
8
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D = - 16 A
T C =25 ℃
相关PDF资料 |
PDF描述 |
|---|---|
| AP4435GM-HF | 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| AP4438GSM-HF | 30 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP4451GH-HF | 45 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP4503BGM-HF | 8.2 A, 30 V, 0.018 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AP4506GEM | 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP4435GH-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower On-resistance |
| AP4435GH-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET PCH -30V 20MOHM TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 20MOHM, TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 20MOHM, TO-252, Transistor Polarity:P Channel, Continuous Drain Current Id:-40A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.02ohm, Rds(on) Test Voltage Vgs:-10V, Power Dissipation Pd:44.6W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, PCH, -30V, 20MOHM, TO-252, Transistor Polarity:P Channel, Continuous Dra |
| AP4435GJ-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower On-resistance |
| AP4435GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4435GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
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