参数资料
型号: AP4435GJ
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 4/6页
文件大小: 216K
代理商: AP4435GJ
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP4435GH/J
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
400
800
1200
1600
2000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
0
10
203040
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = -26 A
V DS = -25 V
1
10
100
1000
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off)tf
VDS
VGS
10%
90%
相关PDF资料
PDF描述
AP4435GH 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP4435GM-HF 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
AP4438GSM-HF 30 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET
AP4451GH-HF 45 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP4503BGM-HF 8.2 A, 30 V, 0.018 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
AP4435GJ-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower On-resistance
AP4435GM 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4435GM-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance
AP4435GYT-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile
AP4435M 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE