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参数资料
| 型号： | AP4455GEH-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 30 V, 0.021 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 59K |
| 代理商： | AP4455GEH-HF |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
-30V
▼ Lower On-resistance
RDS(ON)
21mΩ
▼ Fast Switching Characteristic
ID
-35A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
EAS
Single Pulse Avalanche Energy
4
mJ
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.2
℃/W
Rthj-a
62.5
℃/W
Data and specifications subject to change without notice
50
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
201011023
1
-55 to 150
Thermal Data
Parameter
AP4455GEH-HF
Rating
Halogen-Free Product
39
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
-30
+25
-35
2
Continuous Drain Current, VGS @ 10V
-22
Pulsed Drain Current
1
-120
Total Power Dissipation
Operating Junction Temperature Range
Total Power Dissipation
Storage Temperature Range
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
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相关代理商/技术参数 |
参数描述 |
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| AP4455GMT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, SO-8 Compatible |
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