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参数资料
| 型号： | AP4503GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 7/7页 |
| 文件大小： | 121K |
| 代理商： | AP4503GM |
AP4503GM
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
-6.3
-5
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
7
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
0.0
5.0
10.0
15.0
20.0
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =-6A
V DS =-24V
10
100
1000
10000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
10s
DC
Operation in this area
limited by RDS(ON)
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