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参数资料
| 型号： | AP4511GED |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 40 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, PLASTIC, DIP-8 |
| 文件页数： | 3/7页 |
| 文件大小： | 119K |
| 代理商： | AP4511GED |
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃,ID=-1mA
-
-0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-5A
-
42
mΩ
VGS=-4.5V, ID=-3A
-
60
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.8
-
-2.5
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-40V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-32V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±16V
-
±30
uA
Qg
Total Gate Charge
2
ID=-5A
-
9
24
nC
Qgs
Gate-Source Charge
VDS=-20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
2
VDS=-20V
-
8.5
-
ns
tr
Rise Time
ID=-5A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=-10V
-
27
-
ns
tf
Fall Time
RD=4Ω
-25
-
ns
Ciss
Input Capacitance
VGS=0V
-
770
1230
pF
Coss
Output Capacitance
VDS=-20V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=-1.25A, VGS=0V
-
-1.6
V
trr
Reverse Recovery Time
2
IS=-5A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 90℃/W when mounted on min. copper pad.
3/7
AP4511GED
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
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| AP4521GEH | 11.7 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP4511GED-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
| AP4511GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4511GH-A | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Performance |
| AP4511GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4511GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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