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参数资料
| 型号： | AP4511GH-A |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 8.6 A, 35 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-5 |
| 文件页数： | 1/3页 |
| 文件大小： | 152K |
| 代理商： | AP4511GH-A |
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
35V
▼ Good Thermal Performance
RDS(ON)
27mΩ
▼ Fast Switching Performance
ID
8.6A
P-CH
BVDSS
-35V
RDS(ON)
45mΩ
Description
ID
-6.7A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
35
-35
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current
3
8.6
-6.7
A
ID@TA=70℃
Continuous Drain Current
3
6.9
-5.4
A
IDM
Pulsed Drain Current
1
50
-50
A
PD@TA=25℃
Total Power Dissipation
W
Linear Derating Factor
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
40
℃/W
Data and specifications subject to change without notice
Parameter
200627072-1/7
Thermal Data
AP4511GH-A
RoHS-compliant Product
3.125
0.025
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G2
D2
S2
G1
D1
S1
S1
TO-252-4L
G1
S2
G2
D1/D2
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