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参数资料
| 型号： | AP4513GM-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 35 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 119K |
| 代理商： | AP4513GM-HF |
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
35V
▼ Low On-resistance
RDS(ON)
36mΩ
▼ Fast Switching Performance
ID
5.8A
▼ RoHS Compliant & Halogen-Free
P-CH BVDSS
-35V
RDS(ON)
68mΩ
Description
ID
-4.3A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
35
-35
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current
3
5.8
-4.3
A
ID@TA=70℃
Continuous Drain Current
3
4.7
-3.4
A
IDM
Pulsed Drain Current
1
20
-20
A
PD@TA=25℃
Total Power Dissipation
W
Linear Derating Factor
W/℃
EAS
Single Pulse Avalanche Energy
4
12.5
mJ
IAR
Avalanche Current
5
-5
A
EAR
Repetitive Avalanche Energy
1
0.05
mJ
TSTG
Storage Temperature Range
℃
TJ
Operating Junction Temperature Range
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃
/W
Data and specifications subject to change without notice
0.016
201006284
Parameter
1
Thermal Data
AP4513GM-HF
Halogen-Free Product
-55 to 150
2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D2
SO-8
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