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参数资料
| 型号： | AP4523GD |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 5.6 A, 40 V, 0.04 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, PLASTIC, DIP-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 96K |
| 代理商： | AP4523GD |
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=5A
-
40
mΩ
VGS=4.5V, ID=3A
-
50
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=40V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=32V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±10V
-
±30
uA
Qg
Total Gate Charge
2
ID=5A
-
7
11
nC
Qgs
Gate-Source Charge
VDS=30V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
6
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=20Ω
-4
-
ns
Ciss
Input Capacitance
VGS=0V
-
580
930
pF
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
48
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.5A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=5A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
13
-
nC
2/7
AP4523GD
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