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参数资料
| 型号： | AP4523GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 40 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 7/7页 |
| 文件大小： | 133K |
| 代理商： | AP4523GM |
AP4523GM
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7
0
4
8
12
16
0
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D = -5A
V DS = -30V
10
100
1000
10000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rm
aliz
ed
T
h
er
m
a
lRes
pon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
5
10
15
20
25
30
01
234
56
-V GS , Gate-to-Source Voltage (V)
-I
D
,
Dra
in
C
u
rre
nt
(A
)
T j =150
o C
T j =25
o C
V DS =-5V
Q
VG
-4.5V
QGS
QGD
QG
Charge
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