参数资料
型号: AP4530GH
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 40 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, TO-252, 5 PIN
文件页数: 5/8页
文件大小: 187K
代理商: AP4530GH
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
AP4530GH
Q
VG
4.5V
QGS
QGD
QG
Charge
0
4
8
12
04
8
12
16
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =6A
V DS =32V
10
100
1000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
10
20
30
40
0246
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
The
rmal
Re
sponse
(
R
thja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja=75℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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