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参数资料
| 型号： | AP50G60SW |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | AP50G60SW |
Advanced Power
N-CHANNEL INSULATED GATE
Electronics Corp.
BIPOLAR TRANSISTOR
Features
VCES
▼ High Speed Switching
IC
▼ Low Saturation Voltage
VCE(sat),Typ.=2.6V@IC=33A
▼ Built-in Fast Recovery Diode
Absolute Maximum Ratings
, 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max. junction temperature .
Thermal Data
Symbol
Rthj-c
Rthj-c(Diode)
Rthj-a
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Min.
Typ.
Max.
Units
VCES
600
-
V
IGES
--
+100
nA
ICES
-
500
uA
-
2.6
3
V
-
3.1
3.5
V
VGE(th)
2-
6
V
Qg
-
55
100
nC
Qge
-12
-
nC
Qgc
-27
-
nC
td(on)
-27
-
ns
tr
-22
-
ns
td(off)
-
110
-
ns
tf
-
100
260
ns
Eon
-
0.7
-
mJ
Eoff
-
1.2
-
mJ
Cies
-
1250
2000
pF
Coes
-
235
-
pF
Cres
-7
-
pF
VF
-
1.3
1.7
V
trr
-65
-
ns
Qrr
-
230
-
nC
Data and specifications subject to change without notice
FRD Forward Voltage
IF=15A
Turn-On Switching Loss
Turn-Off Switching Loss
VCE=390V,
Ic=33A,
VGE=15V,
RG=5,
Inductive Load
VGE=0V
Reverse Transfer Capacitance
Rise Time
Fall Time
Turn-off Delay Time
FRD Reverse Recovery Time
IF=15A
FRD Reverse Recovery Charge
di/dt = 200 A/μs
Input Capacitance
VCE=30V
AP50G60SW
Symbol
VCES
600V
45A
Rating
Collector-Emitter Voltage
Units
V
600
Parameter
A
V
150
A
+30
75
VGE
IC@TC=25
oC
Collector Current
Gate-Emitter Voltage
VGE=15V, IC=33A
VGE=+30V, VCE=0V
VGE=0V, IC=500uA
Value
0.42
Parameter
Thermal Resistance Junction-Case
1.5
oC/W
oC
W
oC/W
IF@TC=25
oC
Units
oC/W
-55 to 150
150
Storage Temperature Range
IF@TC=100
oC
Diode Forward Current
15
A
Turn-on Delay Time
Total Gate Charge
Parameter
Gate-to-Emitter Leakage Current
Collect-to-Emitter Breakdown Voltage
Gate-Emitter Charge
Collector-Emitter Leakage Current
Gate Threshold Voltage
RoHS-compliant Product
A
Maximum Power Dissipation
Test Conditions
Thermal Resistance Junction-Case
300
Thermal Resistance Junction-Ambient
ICM
300
Pulsed Collector Current
1
Output Capacitance
f=1.0MHz
oC
40
VGE=15V, IC=50A
Diode Forward Current
40
VCE(sat)
Collector-Emitter Saturation Voltage
201009033
oC
VCE=400V
Gate-Collector Charge
IC=33A
VCE=600V, VGE=0V
VGE=15V
VCE=VGE, IC=250uA
IC@TC=100
oC
Collector Current
45
A
Maximum Lead Temp. for Soldering Purposes
PD@TC=25
oC
TJ
TSTG
Operating Junction Temperature Range
TL
G
C
E
TO-3P
C
G
C
E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP50G60SW-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:High Speed Switching |
| AP50G60W-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP50GT60SW-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP50L02P | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP50L02S | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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